BLS7G3135LS-200 Overview
BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 — 23 September 2013 Product data sheet 1. Product profile 1.1 General 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns)...
BLS7G3135LS-200 Key Features
- High efficiency
- Excellent ruggedness
- Designed for broadband operation
- Excellent thermal stability
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Internally matched for ease of use (input and output)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
