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BLS7G3135LS-200

Manufacturer: NXP Semiconductors

BLS7G3135LS-200 datasheet by NXP Semiconductors.

BLS7G3135LS-200 datasheet preview

BLS7G3135LS-200 Datasheet Details

Part number BLS7G3135LS-200
Datasheet BLS7G3135LS-200-NXP.pdf
File Size 112.70 KB
Manufacturer NXP Semiconductors
Description LDMOS S-band radar power transistor
BLS7G3135LS-200 page 2 BLS7G3135LS-200 page 3

BLS7G3135LS-200 Overview

200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.

BLS7G3135LS-200 Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use (input and output)
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLS7G3135LS-200 from other manufacturers

View BLS7G3135LS-200 datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLS7G3135LS-200 LDMOS S-band radar power transistor Ampleon
NXP Semiconductors logo - Manufacturer

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BLS7G3135LS-200 Distributor

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