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BLS8G2731LS-400P Datasheet LDMOS S-band radar power transistor

Manufacturer: NXP Semiconductors

Overview: BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev. 1 — 26 May 2015 Product data sheet 1. Product profile 1.

Download the BLS8G2731LS-400P datasheet PDF. This datasheet also includes the BLS8G2731L-400P variant, as both parts are published together in a single manufacturer document.

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General Description

400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLS8G2731LS-400P LDMOS S-band radar power transistor Ampleon

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