BLS8G2731LS-400P, BLS8G2731L-400P Datasheet - NXP

BLS8G2731LS-400P LDMOS S-band radar power transistor

400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Test signal f (GHz) VDS (V) PL(1dB) (W) Gp [1] (d.

BLS8G2731LS-400P Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match

BLS8G2731L-400P-NXP.pdf

BLS8G2731LS-400P Datasheet Preview — This datasheet PDF includes multiple part numbers: BLS8G2731LS-400P, BLS8G2731L-400P. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number:

BLS8G2731LS-400P, BLS8G2731L-400P

Manufacturer:

NXP ↗

File Size:

132.83 KB

Description:

Ldmos s-band radar power transistor.

Note:

This datasheet PDF includes multiple part numbers: BLS8G2731LS-400P, BLS8G2731L-400P.
Please refer to the document for exact specifications by model.

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TAGS

BLS8G2731LS-400P BLS8G2731L-400P LDMOS S-band radar power transistor NXP

BLS8G2731LS-400P Distributor