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BSS138AKA Datasheet

single N-channel Trench MOSFET

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BSS138AKA
60 V, single N-channel Trench MOSFET
6 February 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20 -
20 V
[1] - - 200 mA
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors Electronic Components Datasheet

BSS138AKA Datasheet

single N-channel Trench MOSFET

No Preview Available !

NXP Semiconductors
BSS138AKA
60 V, single N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
3
Graphic symbol
D
12
TO-236AB (SOT23)
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BSS138AKA
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
7. Marking
Table 4. Marking codes
Type number
BSS138AKA
Marking code
[1]
%JL
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[1]
[1]
[2]
[1]
BSS138AKA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 February 2013
Min Max Unit
- 60 V
-20 20
V
- 200 mA
- 125 mA
- 800 mA
- 300 mW
- 360 mW
© NXP B.V. 2013. All rights reserved
2 / 14
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Part Number BSS138AKA
Description single N-channel Trench MOSFET
Maker NXP
Total Page 14 Pages
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