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NXP Semiconductors Electronic Components Datasheet

BT151S-650R Datasheet

Thyristors

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Philips Semiconductors
Thyristors
Product specification
BT151S series
BT151M series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT151S (or BT151M)-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R 650R 800R
500 650 800
7.5 7.5 7.5
12 12 12
100 100 100
V
A
A
A
PINNING - SOT428
PIN Standard Alternative
NUMBER
S
M
1
cathode
gate
2
anode
anode
3 gate cathode
tab
anode
anode
PIN CONFIGURATION
tab
2
13
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tmb 103 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -650R -800R
5001 6501 800
7.5
12
100
110
50
50
2
5
5
5
0.5
150
125
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100


NXP Semiconductors Electronic Components Datasheet

BT151S-650R Datasheet

Thyristors

No Preview Available !

Philips Semiconductors
Thyristors
Product specification
BT151S series
BT151M series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
Rth j-mb
Rth j-a
Thermal resistance
junction to mounting base
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
junction to ambient
-
-
TYP.
-
75
MAX. UNIT
1.8 K/W
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT Gate trigger current
IL Latching current
IH Holding current
VT On-state voltage
VGT Gate trigger voltage
ID, IR
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 23 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
7
1.4
0.6
0.4
0.1
MAX.
15
40
20
1.75
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
tq
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform;
Gate open circuit
RGK = 100
ITM = 40 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100
MIN. TYP. MAX. UNIT
50 130
- V/µs
200 1000 - V/µs
- 2 - µs
- 70 - µs
September 1997
2
Rev 1.100


Part Number BT151S-650R
Description Thyristors
Maker NXP
Total Page 6 Pages
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