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NXP Semiconductors Electronic Components Datasheet

BTA216-600BT Datasheet

Triacs high commutation

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BTA216-600BT
Triacs high commutation
Rev. 2 — 9 November 2011
Product data sheet
1. Product profile
1.1 General description
Passivated high commutation triac in a plastic envelope. Featuring high maximum
junction temperature and high commutation capability. Intended for use in circuits where
high static and dynamic dV/dt and high dI/dt can occur. This device will commutate the full
rated RMS current at the maximum rated junction temperature, without the aid of a
snubber.
1.2 Features and benefits
High maximum junction temperature
High commutation capability
1.3 Quick reference data
VDRM 600 V
IGT 50 mA
Tj 150 C
IT(RMS) 16 A
ITSM 140 A
dIcom/dt = 18 A/ms
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base
Simplified outline
mb
[1]
Symbol
T2
sym051
T1
G
[1] Connected to main terminal 2 (T2)
123
SOT78 (TO-220AB)


NXP Semiconductors Electronic Components Datasheet

BTA216-600BT Datasheet

Triacs high commutation

No Preview Available !

NXP Semiconductors
BTA216-600BT
Triacs high commutation
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
BTA216-600BT
TO-220AB
Description
plastic single-ended package; heatsink mounted; 3 leads; 1 mounting
hole
Version
SOT78
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM repetitive peak off-state voltage
IT(RMS) RMS on-state current
full sine wave; Tmb 124 C;
see Figure 4 and 5
ITSM non-repetitive peak on-state current
full sine wave; Tj = 25 C prior to surge;
see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I2t I2t for fusing
t = 10 ms
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s
over any 20 ms period
Min
[1] -
-
Max Unit
600 V
16 A
- 140 A
- 150 A
- 98 A2s
- 100 A/s
- 2A
- 5V
- 5W
- 0.5 W
40 +150 C
- 150 C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/s.
BTA216-600BT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 November 2011
© NXP B.V. 2011. All rights reserved.
2 of 13


Part Number BTA216-600BT
Description Triacs high commutation
Maker NXP
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BTA216-600BT Datasheet PDF






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