BTA416Y-600C Datasheet (3Q Hi-Com Triac)

Part: BTA416Y-600C
Manufacturer: NXP Semiconductors (official site)
Size: 166.14 KB

BTA416Y-600C Key Features

2500 V RMS isolation voltage capability
3Q technology for improved noise immunity
High mutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction temperature operating capability
High surge capability
High voltage capability
Internally insulated package
Internally isolated mounting base
Planar passivated for voltage ruggedness and reliability

Other BTA416Y-600C Datasheets

Manufacturer	Part Number	Description
WeEn	BTA416Y-600C	3Q Hi-Com Triac
Inchange Semiconductor	BTA416Y-600C	Thyristor
WeEn	BTA416Y-600B	3Q Hi-Com Triac

View all BTA416Y-600C datasheets →

BTA416Y-600C Description

Planar passivated high mutation three quadrant triac in a SOT78D (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will mutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high junction temperature operating capability and an internally isolated mounting base.