| Part Number | BTA416Y-600C Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-220 packaging ·Can be operated in 3 quadrants ·Very high commutation performance ·Isolated mounting base ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A. state current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ Tj=150℃ VTM On-state voltage IGT Gate-trigger current IT=20A;tP=380μs Ⅰ VD =12V;IT=0.1A; Ⅱ Ⅲ VGT Gate-trigger voltage VD =12V;IT=0.1A; Rth( j-c) Junction to case MIN MAX UNIT 0.5 2 mA 1.5 V 35 35 mA 35 1.5 V 1.6 ℃/W NOTICE： I. |
BTA416Y-600C Datasheet and Specifications PDF
The BTA416Y-600C is a Thyristor.
| Part Number | BTA416Y-600C Datasheet |
|---|---|
| Description | 3Q Hi-Com Triac |
| Manufacturer | NXP Semiconductors |
| Overview |
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C.
and benefits
* 2500 V RMS isolation voltage capability * 3Q technology for improved noise immunity * High commutation capability with maximum false trigger immunity * High immunity to false turn-on by dV/dt * High junction temperature operating capability * High surge capability * High voltage capab. |
| Part Number | BTA416Y-600C Datasheet |
|---|---|
| Description | 3Q Hi-Com Triac |
| Manufacturer | WeEn |
| Overview |
Planar passivated high commutation three quadrant triac in a IITO220 internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thi.
and benefits
* 3Q technology for improved noise immunity * High commutation capability with maximum false trigger immunity * High immunity to false turn-on by dV/dt * High surge capability * High Tj(max) * Isolated mounting base with 2500 V (RMS) isolation * Less sensitive gate for high noise immuni. |