BUJ303B Datasheet - NXP

Silicon Diffused Power Transistor

BUJ303B General Description

High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM P.

BUJ303B Datasheet (143.70 KB)

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BUJ303B

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NXP ↗

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143.70 KB

Description:

Silicon diffused power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Silicon Diffused .

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BUJ303B Silicon Diffused Power Transistor NXP

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BUJ303B General Description

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