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BUJ303B Datasheet

Silicon Diffused Power Transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ303B
Silicon Diffused Power Transistor
Product specification
March 2002


NXP Semiconductors Electronic Components Datasheet

BUJ303B Datasheet

Silicon Diffused Power Transistor

No Preview Available !

NXP Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ303B
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFEsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 3 A; IB = 1 A
IC = 3 A; VCE = 1.5 V
IC=2.5 A,IB1=0.5 A
TYP.
-
-
-
-
-
-
0.25
10.5
300
MAX.
1050
1050
400
5
10
100
1.5
-
-
UNIT
V
V
V
A
A
W
V
ns
PINNING - TO220AB
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1050
400
1050
5
10
2
4
100
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
60
MAX.
1.25
-
UNIT
K/W
K/W
March 2002
1
Rev 1.000


Part Number BUJ303B
Description Silicon Diffused Power Transistor
Maker NXP
Total Page 9 Pages
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