Datasheet Details
| Part number | BUJ303A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUJ303A-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUJ303A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUJ303A-InchangeSemiconductor.pdf |
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·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.04 K/W BUJ303A isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUJ303A | NPN power transistor | NXP |
|
BUJ303AD | NPN power transistor | NXP |
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BUJ303AX | NPN power transistor | NXP |
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BUJ303B | Silicon Diffused Power Transistor | NXP |
 |
BUJ303CD | NPN power transistor | WeEn |
| Part Number | Description |
|---|---|
| BUJ302A | Silicon NPN Power Transistor |