BUJ303B
BUJ303B is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat h FEsat tf
PARAMETER
Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time
CONDITIONS VBE = 0 V
Tmb ≤ 25 ˚C IC = 3 A; IB = 1 A IC = 3 A; VCE = 1.5 V IC=2.5 A,IB1=0.5 A
TYP.
0.25 10.5 300
MAX.
1050 1050 400
5 10 100 1.5
- UNIT
V V V A A W V ns
PINNING
- TO220AB
PIN DESCRIPTION
1 base 2 collector 3 emitter tab collector
PIN CONFIGURATION tab
1 23
SYMBOL c b e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj
Collector to emitter voltage Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC) Collector current peak value
Base current (DC)
Base current peak value Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a
PARAMETER Junction to mounting base Junction to ambient
CONDITIONS in free...
