Datasheet Details
| Part number | BUJ302A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.61 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUJ302A-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | BUJ302A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.61 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUJ302A-InchangeSemiconductor.pdf |
|
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·High Voltage ·High Speed Switching APPLICATIONS ·Desined for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 2A ICM Collector Current-Peak 3A IB Base Current 0.75 A IBM Base Current-Peak Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 1 50 150 -65~150 A W ℃ ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUJ302A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUJ302A | Silicon Diffused Power Transistor | NXP |
|
BUJ302AD | NPN power transistor | NXP |
|
BUJ302AX | Silicon Diffused Power Transistor | NXP |
 |
BUJ302AX | NPN power transistor | WeEn |
|
BUJ302 | Silicon Diffused Power Transistor | NXP |
| Part Number | Description |
|---|---|
| BUJ303A | Silicon NPN Power Transistor |