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NXP Semiconductors Electronic Components Datasheet

BUJ303CD Datasheet

NPN power transistor

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BUJ303CD
NPN power transistor
8 November 2012
Product data sheet
1. Product profile
1.1 General description
High voltage high speed planar passivated NPN power switching transistor in a SOT428
(DPAK) surface mountable plastic package.
1.2 Features and benefits
Fast switching
Low thermal resistance
Surface mountable package
Tight DC gain spreads
Very high voltage capability
Very low switching and conduction losses
1.3 Applications
DC-to-DC converters
High frequency electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IC
collector current
Fig. 1; Fig. 2; Fig. 4
Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3
VCESM
collector-emitter peak VBE = 0 V
voltage
Static characteristics
hFE
DC current gain
IC = 10 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
IC = 250 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
IC = 800 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
Min Typ Max Unit
- - 5A
- - 80 W
- - 1050 V
28 34 47
35 43 57
31 37 48
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NXP Semiconductors Electronic Components Datasheet

BUJ303CD Datasheet

NPN power transistor

No Preview Available !

NXP Semiconductors
BUJ303CD
NPN power transistor
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 B base
mb
2 C collector[1]
3 E emitter
mb C
mounting base; connected to
collector
2
13
DPAK (SOT428)
Graphic symbol
C
B
E
sym123
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUJ303CD
DPAK
Description
Version
plastic single-ended surface-mounted package (DPAK); 3 leads SOT428
(one lead cropped)
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCESM
collector-emitter peak voltage VBE = 0 V
VCEO
collector-emitter voltage
IB = 0 A
IC collector current
Fig. 1; Fig. 2; Fig. 4
ICM peak collector current
IB base current
IBM peak base current
Ptot
total power dissipation
Tmb ≤ 25 °C; Fig. 3
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 1050 V
- 400 V
- 5A
- 10 A
- 2A
- 4A
- 80 W
-65 150 °C
- 150 °C
BUJ303CD
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 November 2012
© NXP B.V. 2012. All rights reserved
2 / 13


Part Number BUJ303CD
Description NPN power transistor
Maker NXP
Total Page 13 Pages
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