BUK6E3R4-40C Key Features
- AEC Q101 pliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
- Part: BUK6E3R4-40C
- Manufacturer: NXP Semiconductors (official site)
- Size: 225.75 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BUK6E4R0-75C | N-channel TrenchMOS FET |
| BUK6208-40C | N-channel TrenchMOS intermediate level FET |
| BUK6209-30C | N-channel TrenchMOS intermediate level FET |
| BUK6212-40C | N-channel TrenchMOS intermediate level FET |
| BUK624R5-30C | N-channel TrenchMOS Intermediate Level FET |
BUK6E3R4-40C Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.