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BUK6E3R4-40C - N-channel TrenchMOS intermediate level FET

General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Key Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 01 — 17 May 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.