BUK6E4R0-75C Datasheet | NXP Semiconductors

description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for intermediate level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V, 24 V and 42 V Automotive systems - Automotive DC-DC converter - Engine management - Motors, lamps and solenoid control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 75 100 306 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 5 3.4 4 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 100 A; Vsup ≤ 75 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped 858 m J [1] Continuous current is limited by package. .. NXP Semiconductors N-channel Trench MOS FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate Drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK6E4R0-75C I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226 Type number All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data...