BUK6E3R4-40C datasheet by NXP Semiconductors.
| Part number | BUK6E3R4-40C |
|---|---|
| Datasheet | BUK6E3R4-40C_PhilipsSemiconductors.pdf |
| File Size | 225.75 KB |
| Manufacturer | NXP Semiconductors |
| Description | N-channel TrenchMOS intermediate level FET |
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Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
View all NXP Semiconductors datasheets
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|---|---|
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| BUK638-1000 | PowerMOS Transistor / Fast Recovery Diode FET |
| BUK638-500B | PowerMOS Transistor / Fast Recovery Diode FET |
| BUK638-800 | PowerMOS Transistor / Fast Recovery Diode FET |
