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BUK6E4R0-75C Datasheet N-channel TrenchMOS FET

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BUK6E4R0-75C N-channel TrenchMOS FET Rev. 01 — 9 July 2010 Objective data sheet 1. Product profile 1.

General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

1.2

Key Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.