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BUK7514-55 Datasheet, NXP

BUK7514-55 fet equivalent, trenchmos transistor standard level fet.

BUK7514-55 Avg. rating / M : 1.0 rating-18

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BUK7514-55 Datasheet

Features and benefits

very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching application.

Application

BUK7514-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total.

Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended fo.

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