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BUK763R4-30B - N-channel TrenchMOS intermediate level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • AEC Q101 compliant.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Full PDF Text Transcription

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D2PAK BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 2 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1.
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