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BUK7908-40AIE Datasheet

(BUK7108-40AIE / BUK7908-40AIE) TrenchPLUS standard level FET

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BUK71/7908-40AIE
TrenchPLUS standard level FET
Rev. 02 — 24 October 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
1.2 Features
s ESD protection
s Integrated current sensor
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines
s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 40 V
s ID 117 A
s RDSon = 6 m(typ)
s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 sense current (Isense)
3 drain (d)
mb
mb
d
4 Kelvin source
5 source (s)
12 345
g
mb mounting base;
connected to drain (d)
Front view
MBK127
15
MBL263
MBL368
s
Isense
Kelvin source
SOT426 (D2-PAK)
SOT263B (TO-220AB)


NXP Semiconductors Electronic Components Datasheet

BUK7908-40AIE Datasheet

(BUK7108-40AIE / BUK7908-40AIE) TrenchPLUS standard level FET

No Preview Available !

Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
BUK7108-40AIE D2-PAK
Plastic single-ended surface mounted package; 5 leads (one lead cropped) SOT426
BUK7908-40AIE TO-220
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-leads SOT263B
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 k
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
-
-
-
[1] -
[2] -
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
[2] -
-
Ptot
IGS(CL)
total power dissipation
gate-source clamping current
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
continuous
tp = 5 ms; δ = 0.01
-
-
-
55
55
IDR reverse drain current (DC)
Tmb = 25 °C
[1] -
[2] -
IDRM
peak reverse drain current
Avalanche ruggedness
Tmb = 25 °C; pulsed; tp 10 µs
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
Electrostatic discharge
unclamped inductive load; ID = 75 A;
VDS 40 V; VGS = 10 V;
RGS = 50 ; starting Tj = 25 °C
-
Vesd
electrostatic discharge voltage; all Human Body Model; C = 100 pF;
-
pins R = 1.5 k
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40 V
40 V
±20 V
117 A
75 A
75 A
468 A
221
10
50
+175
+175
W
mA
mA
°C
°C
117 A
75 A
468 A
0.63 J
6 kV
9397 750 12086
Product data
Rev. 02 — 24 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2 of 16


Part Number BUK7908-40AIE
Description (BUK7108-40AIE / BUK7908-40AIE) TrenchPLUS standard level FET
Maker NXP
Total Page 16 Pages
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