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BUK9618-30 Datasheet, NXP

BUK9618-30 fet equivalent, trenchmos transistor logic level fet.

BUK9618-30 Avg. rating / M : 1.0 rating-11

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BUK9618-30 Datasheet

Features and benefits

very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching application.

Application

BUK9618-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total.

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection u.

Image gallery

BUK9618-30 Page 1 BUK9618-30 Page 2 BUK9618-30 Page 3

TAGS

BUK9618-30
TrenchMOS
transistor
Logic
level
FET
BUK9618-55
BUK9618-55A
BUK96180-100A
NXP

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