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BUK9635-100A Datasheet, NXP

BUK9635-100A fet equivalent, trenchmos transistor logic level fet.

BUK9635-100A Avg. rating / M : 1.0 rating-13

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BUK9635-100A Datasheet

Features and benefits

very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9635-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj R.

Application

BUK9635-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tot.

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance. It is intended for use in automotive and general pur.

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BUK9635-100A Page 1 BUK9635-100A Page 2 BUK9635-100A Page 3

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