Datasheet Summary
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N-channel TrenchMOS™ logic level FET
M3D308
Rev. 02
- 10 June 2004
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9735-55A in SOT186A (TO-220F).
2. Features s s s s TrenchMOS™ technology Q101 pliant 150 °C rated Logic level patible.
3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT186A, simplified outline and symbol Description gate (g) mb
Simplified outline
Symbol...