CLF1G0035S-100 Datasheet PDF (Broadband RF power GaN HEMT)

CLF1G0035S-100 - Broadband RF power GaN HEMT

This page provides the datasheet information for the CLF1G0035S-100, a member of the CLF1G0035-100 Broadband RF power GaN HEMT family.

Description

CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.

Frequency of operation is from DC to 3.5 GHz.

Table 1.

Features

Frequency of operation is from DC to 3.5 GHz.
100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT.
Excellent ruggedness (VSWR 10 : 1).
High voltage operation (50 V).
Thermally enhanced package 1.3.

Datasheet Details

Part number	CLF1G0035S-100
Manufacturer	NXP Semiconductors
File Size	184.41 KB
Description	Broadband RF power GaN HEMT
Datasheet	CLF1G0035S-100 Datasheet
Additional preview pages of the CLF1G0035S-100 datasheet.

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Full PDF Text Transcription

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CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW f (MHz) 500 1000 1500 2000 1-Tone pulsed [1] 500 1000 1500 2000 [1] Pulsed RF; tp = 50 s;  = 1 %. PL (W) 100 100 100 100 100 100 100 100 Gp (dB) 14.2 11.2 10.8 11.7 15.5 14 14.3 13.9 D (%) 61.6 47.9 46.4 53.3 67.4 52.9 53.7 59.5 Table 2.

Published: Sep 12, 2014 |