* Frequency of operation is from DC to 3.5 GHz
* 100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT
* Excellent ruggedness (VSWR 10 : 1)
* High voltage operation (50 V)
* Thermally enhanced package 1.
CLF1G0035S-100 Datasheet (184.41 KB)
CLF1G0035S-100
184.41 KB
Broadband rf power gan hemt.
CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 29 January 2013 Objective data sheet 1. Product profile 1.1 General descri.
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