Datasheet4U Logo Datasheet4U.com

CLF1G0035S-100P - Broadband RF power GaN HEMT

Download the CLF1G0035S-100P datasheet PDF. This datasheet also covers the CLF1G0035-100P variant, as both devices belong to the same broadband rf power gan hemt family and are provided as variant models within a single manufacturer datasheet.

General Description

The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

Table 1.

CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 330 mA; VDS = 50 V in a class-AB broadband demo board.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CLF1G0035-100P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CLF1G0035S-100P
Manufacturer Ampleon
File Size 430.06 KB
Description Broadband RF power GaN HEMT
Datasheet download datasheet CLF1G0035S-100P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 4 — 24 February 2016 Product data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 330 mA; VDS = 50 V in a class-AB broadband demo board. Test signal f (MHz) PL Gp (W) (dB) D (%) 1-Tone CW 2500 100 12.8 51 2600 100 12.7 52.4 2700 100 12.3 50 2800 100 11.7 49 2900 100 11.5 49 3000 100 10.5 47 1-Tone pulsed [1] 2500 100 14.2 52 2600 100 14.4 54.4 2700 100 14.1 52.5 2800 100 13.7 51.5 2900 100 13.6 51.8 3000 100 12.7 50.1 [1] Pulsed RF; tp = 100 s;  = 10 %. Table 2.