CLF1G0035S-100 Datasheet Broadband Rf Power Gan Hemt

Manufacturer: NXP Semiconductors

Overview: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.

Frequency of operation is from DC to 3.5 GHz.

Table 1.

Frequency of operation is from DC to 3.5 GHz.
100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT.
Excellent ruggedness (VSWR 10 : 1).
High voltage operation (50 V).
Thermally enhanced package 1.3.

Brand Logo	Part Number	Description	Manufacturer
	CLF1G0035S-100	Broadband RF power GaN HEMT	Ampleon
	CLF1G0035S-100P	Broadband RF power GaN HEMT	Ampleon

Part Number	Description
CLF1G0035-100	Broadband RF power GaN HEMT