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CLF1G0035S-100

Manufacturer: NXP Semiconductors

CLF1G0035S-100 datasheet by NXP Semiconductors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

CLF1G0035S-100 datasheet preview

CLF1G0035S-100 Datasheet Details

Part number CLF1G0035S-100
Datasheet CLF1G0035S-100 CLF1G0035-100 Datasheet (PDF)
File Size 184.41 KB
Manufacturer NXP Semiconductors
Description Broadband RF power GaN HEMT
CLF1G0035S-100 page 2 CLF1G0035S-100 page 3

CLF1G0035S-100 Overview

CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. CW and pulsed RF application information Typical RF performance at Tcase = 25 C;.

CLF1G0035S-100 Key Features

  • Frequency of operation is from DC to 3.5 GHz
  • 100 W general purpose broadband RF Power GaN HEMT
  • Excellent ruggedness (VSWR 10 : 1)
  • High voltage operation (50 V)
  • Thermally enhanced package

CLF1G0035S-100 from other manufacturers

View CLF1G0035S-100 datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo CLF1G0035S-100 Broadband RF power GaN HEMT Ampleon
Ampleon Logo CLF1G0035S-100P Broadband RF power GaN HEMT Ampleon
NXP Semiconductors logo - Manufacturer

More Datasheets from NXP Semiconductors

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Part Number Description
CLF1G0035-100 Broadband RF power GaN HEMT

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