* High speed switching
* Interchangeability of drain and source connections
* Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.1 Simplified outline
J111
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N-channel silicon field-effect transistors.
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product speciļ¬cation File under Discrete Semiconducto.
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