LEE1015T Datasheet | NXP Semiconductors

FEATURES - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Interdigitated structure provides high emitter efficiency - Gold metallization realizes very good stability of the characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Intended for use in mon emitter, class A power amplifiers for applications that require a high level of linearity. DESCRIPTION MAM229 PINNING - SOT122A PIN 1 2 3 4 collector emitter base emitter DESCRIPTION handbook, halfpage 4 c 1 3 b e NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package. Marking code: 1015T. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class A narrowband amplifier (guaranteed values). MODE OF OPERATION Class A (CW) Note 1. The stated intermodulation distortion level is referred to...