LEE1015T transistor equivalent, npn microwave power transistor.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
Intended for use in common emitter, class A power amplifiers for applications that require a high level of linearity. DE.
2
MAM229
LEE1015T
PINNING - SOT122A PIN 1 2 3 4 collector emitter base emitter DESCRIPTION
handbook, halfpage 4
c
1 3
b e
NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package.
Marking code: 1015T.
Fig.1 Sim.
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