MD7IC2755GNR1 - RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors
Download the MD7IC2755GNR1 datasheet PDF.
This datasheet also covers the MD7IC2755NR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.
Key Features
Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1).
Full PDF Text Transcription for MD7IC2755GNR1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MD7IC2755GNR1. For precise diagrams, and layout, please refer to the original PDF.
Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on--chip matching that ma...
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wideband integrated circuit is designed with on--chip matching that makes it usable from 2500 -- 2700 MHz. This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. • Typical Doherty WiMAX Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2B = 275 mA, VG2A = 1.7 Vdc, Pout = 10 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 25 dB Power Added Efficiency — 25% Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF ACPR @ 8.
MD7IC2755GNR1 Datasheet
