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MD7IC2755NR1 Datasheet

Manufacturer: NXP Semiconductors
MD7IC2755NR1 datasheet preview

Datasheet Details

Part number MD7IC2755NR1
Datasheet MD7IC2755NR1-NXP.pdf
File Size 1.07 MB
Manufacturer NXP Semiconductors
Description RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2755NR1 page 2 MD7IC2755NR1 page 3

MD7IC2755NR1 Overview

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on--chip matching that makes it usable from 2500 -- 2700 MHz. This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Typical Doherty WiMAX Performance:.

MD7IC2755NR1 Key Features

  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large--Signal Impedance Parameters
  • On--Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS pliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
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