• Part: MD7IC2755GNR1
  • Description: RF LDMOS Wideband Integrated Power Amplifiers
  • Manufacturer: NXP Semiconductors
  • Size: 1.07 MB
Download MD7IC2755GNR1 Datasheet PDF
NXP Semiconductors
MD7IC2755GNR1
Features - Production Tested in a Symmetrical Doherty Configuration - 100% PAR Tested for Guaranteed Output Power Capability - Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source S--Parameters - On--Chip Matching (50 Ohm Input, DC Blocked) - Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1) - Integrated ESD Protection - 225°C Capable Plastic Package - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MD7IC2755N Rev. 3, 9/2010 MD7IC2755NR1 MD7IC2755GNR1 2500--2700 MHz, 10 W AVG., 28 V Wi MAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618--02 TO--270 WB--14 PLASTIC MD7IC2755NR1 CASE 1621--02 TO--270 WB--14 GULL PLASTIC MD7IC2755GNR1 VDS1A RFin A VGS1A VGS2A VGS1B VGS2B RFin B VDS1B Quiescent Current Temperature pensation (1) Quiescent Current Temperature pensation (1) Figure 1. Functional Block Diagram PEAKING (2) RFout1/VDS2A CARRIER (2) RFout2/VDS2B VDS1A...