MD7IC2755GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

This page provides the datasheet information for the MD7IC2755GNR1, a member of the MD7IC2755NR1 RF LDMOS Wideband Integrated Power Amplifiers family.

Product Overview

NXP

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MD7IC2755GNR1 RF LDMOS Wideband Integrated Power Amplifiers by NXP - Datasheet Preview — Datasheet preview – MD7IC2755GNR1

Datasheet Details

Part number	MD7IC2755GNR1
Manufacturer	NXP
File Size	1.07 MB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	MD7IC2755GNR1 Datasheet
Additional preview pages of the MD7IC2755GNR1 datasheet.

MD7IC2755GNR1 Product details

Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.

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Other Datasheets by NXP

MD7IC2755NR1 - RF LDMOS Wideband Integrated Power Amplifiers

Published: Oct 18, 2018 |