MD7IC2755GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Product Overview

NXP

Part number	MD7IC2755GNR1
Manufacturer	NXP
File Size	1.07 MB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	MD7IC2755GNR1 Datasheet
Note	This datasheet PDF includes multiple part numbers: MD7IC2755GNR1, MD7IC2755NR1. Please refer to the document for exact specifications by model.
Additional preview pages of the MD7IC2755GNR1 datasheet.

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.

📁 Similar Datasheet

MD7IC2050GNR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MD7IC2050NBR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MD7IC2050NR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MD7IC21100GNR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MD7IC21100NbR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MD7IC21100NR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MD7IC18120GNR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MD7IC18120NR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)

Other Datasheets by NXP

Published: Oct 18, 2018 |