MD8IC925GNR1 - RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors
Download the MD8IC925GNR1 datasheet PDF.
This datasheet also covers the MD8IC925NR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.
Key Features
Characterized with series equivalent large--signal impedance parameters and common source S--parameters.
On--chip matching (50 Ohm input, DC blocked).
Integrated quiescent current temperature compensation with
Enable/Disable function (1).
Integrated ESD protection.
Designed for digital predistortion error correction systems.
Full PDF Text Transcription for MD8IC925GNR1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MD8IC925GNR1. For precise diagrams, and layout, please refer to the original PDF.
NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on--chip matching that makes it...
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nd integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz Typical single--carrier W--CDMA performance: VDD = 28 Vdc, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 W Avg., IQ magnitude clipping, channel bandwidth = 3.84 MHz, input signal PAR = 7.5 dB @ 0.01% probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 940 MHz 960 MHz 36.2 17.5 --48.9 36.2 17.4 --49.5 36.1 17.3 --49.
MD8IC925GNR1 Datasheet
