MD8IC925GNR1 Description
NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats. Driver Application 900 MHz Typical single--carrier W--CDMA performance:.
MD8IC925GNR1 Key Features
- Characterized with series equivalent large--signal impedance parameters and mon source S--parameters
- On--chip matching (50 Ohm input, DC blocked)
- Integrated ESD protection
- Designed for digital predistortion error correction systems
- Optimized for Doherty