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MD8IC925NR1 - RF LDMOS Wideband Integrated Power Amplifiers

Key Features

  • Characterized with series equivalent large--signal impedance parameters and common source S--parameters.
  • On--chip matching (50 Ohm input, DC blocked).
  • Integrated quiescent current temperature compensation with Enable/Disable function (1).
  • Integrated ESD protection.
  • Designed for digital predistortion error correction systems.
  • Optimized for Doherty.

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Other Datasheets by NXP Semiconductors

Part Number Description
MD8IC925GNR1 RF LDMOS Wideband Integrated Power Amplifiers

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NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz  Typical single--carrier W--CDMA performance: VDD = 28 Vdc, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 W Avg., IQ magnitude clipping, channel bandwidth = 3.84 MHz, input signal PAR = 7.5 dB @ 0.01% probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 940 MHz 960 MHz 36.2 17.5 --48.9 36.2 17.4 --49.5 36.1 17.3 --49.