NXP Semiconductors MD8IC925GNR1
The MD8IC925N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats.| Part No. | MD8IC925GNR1 |
|---|---|
| Datasheet | MD8IC925GNR1 Download |
| Manufacturer |  NXP Semiconductors |
| Description | RF LDMOS Wideband Integrated Power Amplifiers |
| Buy | Stock & Price |
FEATURES
● Characterized with series equivalent large--signal impedance parameters and common source S--parameters● On--chip matching (50 Ohm input, DC blocked)
● Integrated quiescent current temperature compensation with Enable/Disable function (1)
● Integrated ESD protection
● Designed for digital predistortion error correction systems
● Optimized for Doherty applications
● 225C capable plastic package Document Number: MD8IC925N Rev. 1, 9/2016 MD8IC925NR1 MD8IC925GNR1 728--960 MHz, 2.5 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270WB--14 PLASTIC MD8IC925NR1 TO--270WBG--14 PLASTIC MD8IC925GNR1 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to and search for AN1977 or AN1987. 2016 NXP B.V. RF Device Data NXP Semiconductors MD8IC925NR1 MD8IC925GNR1 1 VDS1A RFinA VGS1A VGS2A VGS1B VGS2B RFinB VDS1B Quiescent Current Temperature Compensation (1) Quiescent Current Temperature Compensation (1) Figure 1.
