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NXP Semiconductors Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MD8IC925N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats.
Driver Application — 900 MHz
Typical single--carrier W--CDMA performance: VDD = 28 Vdc, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 W Avg., IQ magnitude clipping, channel bandwidth = 3.84 MHz, input signal PAR = 7.5 dB @ 0.01% probability on CCDF.
Frequency
Gps (dB)
PAE (%)
ACPR (dBc)
920 MHz 940 MHz 960 MHz
36.2
17.5
--48.9
36.2
17.4
--49.5
36.1
17.3
--49.
MD8IC925GNR1 Datasheet
