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MD8IC925GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MD8IC925GNR1 datasheet PDF. This datasheet also covers the MD8IC925NR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized with series equivalent large--signal impedance parameters and common source S--parameters.
  • On--chip matching (50 Ohm input, DC blocked).
  • Integrated quiescent current temperature compensation with Enable/Disable function (1).
  • Integrated ESD protection.
  • Designed for digital predistortion error correction systems.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MD8IC925NR1-NXP.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
MD8IC925NR1 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz  Typical single--carrier W--CDMA performance: VDD = 28 Vdc, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 W Avg., IQ magnitude clipping, channel bandwidth = 3.84 MHz, input signal PAR = 7.5 dB @ 0.01% probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 940 MHz 960 MHz 36.2 17.5 --48.9 36.2 17.4 --49.5 36.1 17.3 --49.