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MMBT2222A - NPN switching transistor

General Description

NPN switching transistor in a SOT23 plastic package.

PNP complement: PMBT2907A.

1.

= p : Made in Hong Kong.

= t : Made in Malaysia.

= W : Made in China.

Key Features

  • High current (max. 600 mA).
  • Low voltage (max. 40 V).

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Full PDF Text Transcription for MMBT2222A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMBT2222A. For precise diagrams, and layout, please refer to the original PDF.

DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors NPN switching trans...

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data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors NPN switching transistor Product data sheet MMBT2222A FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. PINNING PIN 1 2 3 DESCRIPTION base emitter collector DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A. MARKING TYPE NUMBER MMBT2222A MARKING CODE(1) 7C* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol.