MMBT2222A Datasheet and Specifications PDF

The MMBT2222A is a NPN GENERAL PURPOSE SWITCHING TRANSISTOR.

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Part NumberMMBT2222A Datasheet
ManufacturerPanJit Semiconductor
Overview MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volt POWER 225 mWatt 0.006(0.15)MIN. FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collecto.
* NPN epitaxial silicon, planar design
* Collector-emitter voltage VCE = 40V
* Collector current IC = 600mA
* Lead free in compliance with EU RoHS 2.0
* Green molding compound as per IEC 61249 standard 0.120(3.04) 0 . 11 0 ( 2 . 8 0 ) 0.056(1.40) 0.047(1.20) MECHANICAL DATA Case: SOT-23, Plastic T.
Part NumberMMBT2222A Datasheet
DescriptionNPN Amplifier
ManufacturerGalaxy Microelectronics
Overview Production specification NPN General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Complementary PNP type available Pb Lead-free MMBT2907A.  Ultra-small surface mount package.
* Epitaxial planar die construction.
* Complementary PNP type available Pb Lead-free MMBT2907A.
* Ultra-small surface mount package.
* MSL 1 APPLICATIONS
* Use as a medium power amplifier.
* Switching requiring collector currents up to 500mA. ORDERING INFORMATION Type No. Marking MMBT2222A.
Part NumberMMBT2222A Datasheet
DescriptionNPN Transistor
ManufacturerGood-Ark Semiconductor
Overview Features  High current low voltage  Complementary PNP MMBT2907A  SOT-23 small surface mount package Applications  General purpose amplifier  Switching MMBT2222A NPN Transistor C E B SOT-23 Abso.
* High current low voltage
* Complementary PNP MMBT2907A
* SOT-23 small surface mount package Applications
* General purpose amplifier
* Switching MMBT2222A NPN Transistor C E B SOT-23 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO.
Part NumberMMBT2222A Datasheet
DescriptionNPN Transistor
ManufacturerCystech Electonics
Overview • The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. • High IC(Max), IC(Max) = 0.6A. • Low VCE(sat) , Typ. VCE(sat) = 0.2V at IC/IB = 500mA/. Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat
*Temperature Min(TS min)
*Temperature Max(TS max)
*Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above:
*Temperature (TL)
* Ti.