MRF101AN Datasheet | NXP Semiconductors

Features - Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration - Characterized from 30 to 50 V - Suitable for linear application - Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation - Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications - Industrial, scientific, medical (ISM) - Radio and VHF TV broadcast - Laser generation - Plasma etching - Particle accelerators - HF and VHF munications - Switch mode power supplies - MRI and other medical applications - Industrial heating, welding and drying systems  2018- 2019 NXP B.V. RF Device Data NXP Semiconductors MRF101AN MRF101BN 1 Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C Symbol VDSS VGS VDD Tstg TC TJ PD Value - 0.5, +133 - 6.0, +10 - 65 to +150 - 40 to +150 - 40 to +175 182 0.91 Unit Vdc Vdc...