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MRF101AN - RF Power LDMOS Transistors

Features

  • Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration.
  • Characterized from 30 to 50 V.
  • Suitable for linear.

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Datasheet preview – MRF101AN

Datasheet Details

Part number MRF101AN
Manufacturer NXP
File Size 836.13 KB
Description RF Power LDMOS Transistors
Datasheet download datasheet MRF101AN Datasheet
Additional preview pages of the MRF101AN datasheet.

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Full PDF Text Transcription

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NXP Semiconductors Technical Data Document Number: MRF101AN Rev. 1, 05/2019 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 87.5–108 (6,7) 136–174 (7,8) 230 (9) CW CW CW CW CW CW CW Pulse (100 sec, 20% Duty Cycle) 130 CW 125 CW 120 CW 119 CW 130 CW 115 CW 104 CW 115 Peak 27.1 24.9 23.8 22.8 23.2 20.6 21.2 21.1 79.6 79.6 81.5 82.1 80.8 76.8 76.5 76.7 1.
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