Datasheet Summary
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10120/D
The RF Line
Microwave Long Pulse Power Transistor
Designed for 960- 1215 MHz long pulse mon base amplifier applications such as JTIDS and Mode S transmitters.
- Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ)
- 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
- Hermetically Sealed Industry Standard Package
- Silicon Nitride Passivated
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
- Internal Input and Output Matching for Broadband Operation
120 W (PEAK), 960- 1215 MHz MICROWAVE POWER TRANSISTOR NPN...
