| Part Number | MRF10120 |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10120/D
Microwave Long Pulse Power Transistor
Designed for 960 – 1215 MHz long pulse common base amplifier applications s.
1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 15 380 2.17 * 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.46 Unit °C/. |
MRF10120 Datasheet
The MRF10120 is a MICROWAVE POWER TRANSISTORS.
| Part Number | MRF10120 |
|---|---|
| Description | MICROWAVE POWER TRANSISTORS |
| Manufacturer | Tyco Electronics |
| Overview |
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10120/D
The RF Line
Microwave Long Pulse Power Transistor
Designed for 960–1215 MHz long pulse common base amplifier applications such as JTID.
55 55 3.5 15 380 2.17 *65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.46 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACT. |