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NXP Semiconductors Technical Data
RF Power GaN Transistors
These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in
CW, pulse, cycling and linear applications. These high gain, high efficiency
devices are easy to use and will provide long life in even the most demanding environments.
These parts are characterized and performance is guaranteed for
applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of
these frequencies.
MRF24G300H Datasheet
