MRF24G300H Overview
NXP Semiconductors Technical Data RF Power GaN Transistors These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.
MRF24G300H Key Features
- Advanced GaN on SiC, for optimal thermal performance
- Characterized for CW, long pulse (up to several seconds) and short pulse
- Device can be used in a single--ended or push--pull configuration
- Input matched for simplified input circuitry
- Qualified up to 55 V
- Suitable for linear application