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MRF24G300H, MRF24G300HS RF Power GaN Transistors

MRF24G300H Description

NXP Semiconductors Technical Data RF Power GaN Transistors These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) .

MRF24G300H Features

* Advanced GaN on SiC, for optimal thermal performance
* Characterized for CW, long pulse (up to several seconds) and short pulse operations
* Device can be used in a single
* ended or push
* pull configuration
* Input matched for simplified input circuitry
* Qualifie

MRF24G300H Applications

* at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments. These parts are characterized and performance is guaranteed for applications ope

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF24G300H, MRF24G300HS. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF24G300H, MRF24G300HS
Manufacturer
NXP ↗
File Size
259.58 KB
Datasheet
MRF24G300HS-NXP.pdf
Description
RF Power GaN Transistors
Note
This datasheet PDF includes multiple part numbers: MRF24G300H, MRF24G300HS.
Please refer to the document for exact specifications by model.

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Power GaN Transistors NXP
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