Part MRF6S21140HR3
Description RF Power FET
Manufacturer NXP Semiconductors
Size 876.77 KB
NXP Semiconductors
MRF6S21140HR3

Overview

  • Characterized with Series Equivalent Large--Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF6S21140H Rev. 5, 2/2010