MRF6S21140HSR3
MRF6S21140HSR3 is RF Power FET manufactured by NXP Semiconductors.
- Part of the MRF6S21140HR3 comparator family.
- Part of the MRF6S21140HR3 comparator family.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
- Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain
- 15.5 dB Drain Efficiency
- 27.5% IM3 @ 10 MHz Offset
- --37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset
- --41 dBc in 3.84 MHz Channel Bandwidth
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