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MRF6S21140HSR3 - RF Power FET

Download the MRF6S21140HSR3 datasheet PDF. This datasheet also covers the MRF6S21140HR3 variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S21140HR3-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6S21100HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S21100HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S21100NBR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S21100NR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S21050LR3 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF6S21140HR3 RF Power FET
MRF6S9060MBR1 RF Power Field Effect Transistors
MRF6S9060MR1 RF Power Field Effect Transistors
MRF6S9060NBR1 RF Power Field Effect Transistors
MRF6S9060NR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --41 dBc in 3.