MRF6S9060MR1
MRF6S9060MR1 is RF Power Field Effect Transistors manufactured by NXP Semiconductors.
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead
- free terminations.
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon
- source amplifier applications in 28 volt base station equipment.
- Typical Single
- Carrier N
- CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA,...
