MRF6S9060NR1
MRF6S9060NR1 is RF Power Field Effect Transistors manufactured by NXP Semiconductors.
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon
- source amplifier applications in 28 volt base station equipment.
- Typical Single
- Carrier N
- CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS
- 95 CDMA (Pilot, Sync,...
