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MRF6S9060NR1 Datasheet Rf Power Field Effect Transistors

Manufacturer: NXP Semiconductors

Overview: ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21.4 dB Drain Efficiency — 32.1% ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
  • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 MRF6S9060NBR1 880 MHz, 14 W AVG. , 28.

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