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MRF6S21140HR3 - RF Power FET

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Optimized for Doherty.

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📁 Similar Datasheet

Part Number Description Manufacturer
MRF6S21100HR3 RF Power Field Effect Transistors Freescale Semiconductor
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MRF6S21050LR3 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF6S21140HSR3 RF Power FET
MRF6S9060MBR1 RF Power Field Effect Transistors
MRF6S9060MR1 RF Power Field Effect Transistors
MRF6S9060NBR1 RF Power Field Effect Transistors
MRF6S9060NR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --41 dBc in 3.