Datasheet4U Logo Datasheet4U.com

MRF6S9060NBR1 - RF Power Field Effect Transistors

Download the MRF6S9060NBR1 datasheet PDF. This datasheet also covers the MRF6S9060NR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
  • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 MRF6S9060NBR1 880 MHz, 14 W AVG. , 28.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S9060NR1-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6S9060 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S9045 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S9125MBR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S9125MR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S9125NBR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF6S9060NR1 RF Power Field Effect Transistors
MRF6S9060MBR1 RF Power Field Effect Transistors
MRF6S9060MR1 RF Power Field Effect Transistors
MRF6S21140HR3 RF Power FET
MRF6S21140HSR3 RF Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.