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NXP Semiconductors Electronic Components Datasheet

MRF6V2010GN Datasheet

RF Power FET

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NXP Semiconductors
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%
Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
output power
Features
Characterized with series equivalent large--signal impedance parameters
Qualified up to a maximum of 50 VDD operation
Integrated ESD protection
225C capable plastic package
Document Number: MRF6V2010N
Rev. 6, 9/2016
MRF6V2010N
MRF6V2010NB
MRF6V2010GN
10--450 MHz, 10 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
TO--270--2
PLASTIC
MRF6V2010N
TO--272--2
PLASTIC
MRF6V2010NB
TO--270G--2
PLASTIC
MRF6V2010GN
Gate 2
1 Drain
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
2007–2008, 2010, 2016 NXP B.V.
RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
1


NXP Semiconductors Electronic Components Datasheet

MRF6V2010GN Datasheet

RF Power FET

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic
VDSS
VGS
Tstg
TC
TJ
Symbol
--0.5, +110
--0.5, +10
-- 65 to +150
150
225
Value (2,3)
Vdc
Vdc
C
C
C
Unit
Thermal Resistance, Junction to Case
Case Temperature 81C, 10 W CW
RJC
3.0
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 5 mA, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IGSS
10
Adc
V(BR)DSS
110
Vdc
IDSS
50
Adc
IDSS
2.5
mA
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 28 Adc)
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 30 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 70 mAdc)
VGS(th)
1
1.68
3
Vdc
VGS(Q)
1.5
2.68
3.5
Vdc
VDS(on)
0.26
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
0.13
pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
7.3
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
16.3
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
MRF6V2010N MRF6V2010NB MRF6V2010GN
2
RF Device Data
NXP Semiconductors


Part Number MRF6V2010GN
Description RF Power FET
Maker NXP
Total Page 3 Pages
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