MRF6V2010N Datasheet PDF (RF Power FET)

MRF6V2010N - RF Power FET

Features

Characterized with series equivalent large--signal impedance parameters.
Qualified up to a maximum of 50 VDD operation.
Integrated ESD protection.
225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V.

Datasheet Details

Part number	MRF6V2010N
Manufacturer	NXP
File Size	1.42 MB
Description	RF Power FET
Datasheet	MRF6V2010N Datasheet
Additional preview pages of the MRF6V2010N datasheet.

📁 Similar Datasheet

MRF6V2010NBR1 - RF Power Field Effect Transistor (Freescale Semiconductor)

MRF6V2010NR1 - RF Power Field Effect Transistor (Freescale Semiconductor)

MRF6V2150N - RF Power Field Effect Transistor (Motorola Semiconductor)

MRF6V2150NB - RF Power Field Effect Transistor (Motorola Semiconductor)

MRF6V2150NBR1 - RF Power FET (Freescale Semiconductor)

MRF6V2150NR1 - RF Power FET (Freescale Semiconductor)

MRF6V2300N - RF Power Field Effect Transistor (Motorola Semiconductor)

MRF6V2300NB - RF Power Field Effect Transistor (Motorola Semiconductor)

MRF6V10250HSR3 - RF Power Field Effect Transistor (Freescale Semiconductor)

MRF6V12500HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)

Full PDF Text Transcription

Click to expand full text

NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.  Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain — 23.9 dB Drain efficiency — 62%  Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power Features  Characterized with series equivalent large--signal impedance parameters  Qualified up to a maximum of 50 VDD operation  Integrated ESD protection  225C capable plastic package Document Number: MRF6V2010N Rev.

Published: Jul 10, 2020 |