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MRF6V2010N RF Power FET

MRF6V2010N Description

NXP Semiconductors Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed primarily for .

MRF6V2010N Features

* Characterized with series equivalent large
* signal impedance parameters
* Qualified up to a maximum of 50 VDD operation
* Integrated ESD protection
* 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10
* 450 M

MRF6V2010N Applications

* with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain
* 23.9 dB Drain efficiency
* 62%
* Capable of handling 10:

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Datasheet Details

Part number
MRF6V2010N
Manufacturer
NXP ↗
File Size
1.42 MB
Datasheet
MRF6V2010N-NXP.pdf
Description
RF Power FET

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Power FET NXP
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