MRF6V2010N Key Features
- Characterized with series equivalent large--signal impedance parameters
- Qualified up to a maximum of 50 VDD operation
- Integrated ESD protection
- 225C capable plastic package
- 0.5, +110 --0.5, +10 -- 65 to +150
- Part: MRF6V2010N
- Description: RF Power FET
- Manufacturer: NXP Semiconductors
- Size: 1.42 MB
Other MRF6V2010N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Freescale Semiconductor |
MRF6V2010NBR1 | RF Power Field Effect Transistor |
|
Freescale Semiconductor |
MRF6V2010NR1 | RF Power Field Effect Transistor |