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MRF6V2010N - RF Power FET

Features

  • Characterized with series equivalent large--signal impedance parameters.
  • Qualified up to a maximum of 50 VDD operation.
  • Integrated ESD protection.
  • 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V.

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Other Datasheets by NXP

Full PDF Text Transcription

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NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.  Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain — 23.9 dB Drain efficiency — 62%  Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power Features  Characterized with series equivalent large--signal impedance parameters  Qualified up to a maximum of 50 VDD operation  Integrated ESD protection  225C capable plastic package Document Number: MRF6V2010N Rev.
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