MRF6VP3450HSR5, MRF6VP3450HR6 Datasheet - NXP

MRF6VP3450HSR5 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 50 volt analog or digital television transmitter equipment. Typical DVB T OFDM Performance: VDD = 50 Vo.

MRF6VP3450HSR5 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Internally Input Matched for Ease of Use

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Designed for Push

* Pull Operation

* Greater

MRF6VP3450HR6-NXP.pdf