MRF8S9200NR3 Datasheet PDF (RF Power Field Effect Transistor)

MRF8S9200NR3 - RF Power Field Effect Transistor

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
225°C Capable Plastic Package.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

Datasheet Details

Part number	MRF8S9200NR3
Manufacturer	NXP
File Size	533.12 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S9200NR3 Datasheet
Additional preview pages of the MRF8S9200NR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 1, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 920 MHz 940 MHz 960 MHz 19.9 37.7 19.9 37.1 19.5 36.8 6.1 --36.2 6.1 --36.6 6.0 --36.0 MRF8S9200NR3 920--960 MHz, 58 W AVG.

Published: Mar 19, 2024 |