MRF8S9200NR3 Overview
Freescale Semiconductor Technical Data Document Number: 1, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S9200NR3 Key Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C
- 225°C Capable Plastic Package
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty
