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MRF8S9200NR3 - RF Power Field Effect Transistor

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NXP

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MRF8S9200NR3 RF Power Field Effect Transistor by NXP - Datasheet Preview — Datasheet preview – MRF8S9200NR3

Datasheet Details

Part number	MRF8S9200NR3
Manufacturer	NXP
File Size	533.12 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S9200NR3 Datasheet
Additional preview pages of the MRF8S9200NR3 datasheet.

Product details

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
225°C Capable Plastic Package.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Mar 19, 2024 |