NXP Semiconductors Electronic Components Datasheet

MRF9045MBR1 Datasheet

RF Power FET

No Preview Available !

Freescale Semiconductor

Technical Data

MRF9045MR1

Rev. 9, 5/2006

Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this

part replacement. N suffix added to part number to indicate transition to lead - free

terminations.

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large - signal, common - source amplifier applica-

tions in 28 volt base station equipment.

• Typical Performance at 945 MHz, 28 Volts

Output Power — 45 Watts PEP

Power Gain — 19 dB

Efficiency — 41% (Two Tones)

IMD — - 31 dBc

• Integrated ESD Protection

• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,

45 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface

Mount.

• 200_C Capable Plastic Package

• TO - 272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

• TO - 270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

MRF9045MR1

MRF9045MBR1

945 MHz, 45 W, 28 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 1265 - 08, STYLE 1

TO - 270

PLASTIC

MRF9045MR1

CASE 1337 - 03, STYLE 1

TO - 272 DUAL LEAD

PLASTIC

MRF9045MBR1

Table 1. Maximum Ratings

Rating

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Table 3. ESD Protection Characteristics

Test Conditions

Human Body Model

Machine Model

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

Symbol

VDSS

VGS

Tstg

Symbol

RθJC

Value

- 0.5, +65

- 0.5, + 15

177

1.18

- 65 to +150

200

Value

0.85

Class

1 (Minimum)

M2 (Minimum)

Rating

Package Peak Temperature

260

Unit

Vdc

W/°C

°C

Unit

°C/W

Unit

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

RF Device Data

Freescale Semiconductor

MRF9045MR1 MRF9045MBR1

NXP Semiconductors Electronic Components Datasheet

MRF9045MBR1 Datasheet

RF Power FET

No Preview Available !

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 μAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 350 mAdc)

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

Dynamic Characteristics

IDSS

—

IDSS

—

IGSS

—

VGS(th)

VGS(Q)

VDS(on)

—

gfs

—

Input Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Ciss

—

Coss

—

Crss

—

Two - Tone Common - Source Amplifier Power Gain